A new report about the specs of the Samsung Galaxy S6 Edge Plus reveals how powerful the upcoming phablet could be. The source is a tech publication based in Vietnam called Samsung Viet, which, according to GSM Arena, already got a hold of a prototype. 

First, the site states that the new Samsung offering will boast 4 GB of RAM, contradicting earlier rumors that the bigger Galaxy S6 Edge will only have 3 GB. There have also been reports that the Galaxy Note 5, the second purported device about to be released by Samsung, will be the phablet that will get 4 GB. If these reports are accurate, then the Samsung Galaxy S6 Plus and the Galaxy Note 5 will make history by becoming the first handsets from the South Korea-based company to feature that much internal memory. 

Another rumor that this new report is trying to debunk is that the Galaxy S6 variant will be equipped with a Snapdragon 808 processor, the last-generation chipset released by Qualcomm. Samsung Viet claims that the phablet is getting an Exynos 7420 processor instead. This chipset is the same unit used in the Samsung Galaxy S6 and S6 Edge, which should make the Samsung Galaxy S6 Edge Plus impressively powerful. But to make it feel more like an upgrade, the report suggests that this processor will be clocked higher than the S6 duo, with a boost to 2.1 GHz.

Lastly, the new S6 Edge edition is expected to pack a massive 3000 mAh battery.

For now, although promising, the report remains uncorroborated. Until Samsung officially speaks about the matter and releases the device, these rumors remain as they are. It is believed that the Samsung Galaxy S6 Edge Plus will be unveiled next month during Samsung's Unpacked event.